Modeling of stress-retarded orientation-dependent oxidation: shape engineering of silicon nanowire channels
2009
A new universal stress retardation parameter set is successful to account for initial oxidation rate enhancement, orientation-dependent retardation and self-limiting phenomena observed in the dry oxidation experiment of the silicon FIN nanostructures over a wide temperature range. This stress-retarded orientation-dependent model was proved to be trustworthy in shape engineering of silicon nanowire channels.
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