writes thin film magnetic memory device, the data with bidirectional current

Thin film magnetic memory device a plurality of memory cells (MC) arranged in rows and columns and each of which stores a data value which has been written in response to the application of a first and a second data write magnetic field; a plurality of write word lines (WWL), the lines are provided respectively, for performing a first data write current (Ip) which generates in a selected row, the first data write magnetic field in a predetermined direction; a plurality of first bit lines (BL), which are respectively provided corresponding to the columns; and a data write circuit for passing a second data write current (± Iw) generating the second data write magnetic field, at a write data (DIN) corresponding direction by a portion corresponding to a selected memory cell (MC), a selected first bit line (BL), on the one corresponding to the selected column; wherein the data writing circuit includes a plurality of Bitleitungstreiberabschnitten (CDGA, CDGB, WDG, BDVa, BDVb, BDVm), which provided for each column and in each case according to a first ...