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The Surface-Potential-Based model HiSIM-SOI and its Application to 1/f Noise in Fully-Depleted SOI-MOSFETs
The Surface-Potential-Based model HiSIM-SOI and its Application to 1/f Noise in Fully-Depleted SOI-MOSFETs
2005
S. Baba
M. H. Bhuyan
U. Feldmann
D. Kitamaru
H. J. Mattausch
Mitiko Miura-Mattausch
N Sadachika
Y. Uetsuji
L Weiss
Yusoff M.Md.
Keywords:
Silicon on insulator
Noise
surface
Physics
Optoelectronics
Correction
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