Old Web
English
Sign In
Acemap
>
Paper
>
SEMICONDUCTOR PHYSICS: Tunnelling piezoresistive effect of grain boundary in polysilicon nano-films
SEMICONDUCTOR PHYSICS: Tunnelling piezoresistive effect of grain boundary in polysilicon nano-films
2010
Rongyan Chuai
Bin Liu
Xiaowei Liu
Sun Xianlong
Changzhi Shi
Lijian Yang
Keywords:
Electronic band structure
Piezoresistive effect
Grain boundary diffusion coefficient
Electronic engineering
Nano-
Engineering
Grain boundary
Quantum tunnelling
Grain size
Semiconductor
Correction
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]