Exit chipping in ID sawing of silicon crystals

The processes involved in exit chipping which may occur in the internal diameter diamond sawing of silicon crystals were examined. An interpretation of chipping observations is given in terms of crack propagation as acted upon by the sawing stresses. Since the exit chips are roughly parallel to saw marks, the general locus of the crack must be determined by contact stresses although the exact locus depends on already existing subfractures located in the kerf region which are caused by more than one abrasive particle. The crack starts at either edge since these are weak areas in flexure. In the more extensive "saw fracture", the fracture plane often changes part-way across the slice to be other than parallel to the saw mark because the speed of the crack accelerates beyond the speed of the blade travel; i.e., outstrips the advance of the contact stress field. The influences of various external factors on the opening of the crack are divided into two types: factors that wedge the crack apart and those that bend the slice away from the crystal. From a consideration of these factors, conditions for minimizing exit chipping are defined.