Room-temperature contactless electromodulation investigation of wafer-sized quantum well laser structures

This paper reviews the use of the contactless electromodulation spectroscopy methods of photoreflectance and contactless electroreflectance for the nondestructive, room temperature investigation of wafer-scale single or multiquantum well laser structures including 0.98 micrometer InGaAs/GaAs/GaAlAs (graded index separate confinement heterostructure), 1.3 micrometer InGaAsP/InP, 0.98 micrometer InGaAs/GaAs/InGaP and 0.65 micrometer InGaP/AlInP/AlGaInP planar as well as InGaAs/GaAs/GaAlAs and GaAs/GaAlAs vertical cavity emitting samples.© (1996) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.