Photosensitive point structures based on CuIn2m + 1Se3m + 2 crystals

Photosensitive point structures based on CuIn2m + 1Se3m + 2 (m = 0, 1, 2) single crystals have been obtained for the first time by means of electric-discharge welding (EDW). The stationary current-voltage characteristics and the photovoltaic properties of the structures based on CuInSe2, CuIn3Se5, and CuIn5Se8 ternary semiconductors have been studied, which show evidence for the rectification effect and photoconversion. The character of interband transitions is established and the bandgap width variation in this series of compounds is traced. It is concluded that EDW can be successfully used for the fabrication of photoconverters based on multicomponent semiconductors.