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Field-Effect Transistors Based on Few-Layered Ambipolar MoSe 2 and α-MoTe 2
Field-Effect Transistors Based on Few-Layered Ambipolar MoSe 2 and α-MoTe 2
2015
Daniel Rhodes
Nihar R. Pradhan
Simin Feng
Byoung Hee Moon
Yan Xin
Sharhriar Memaran
Muhandis Siddiq
Lakshmi Bhaskaran
Stephen Hill
Humberto Terrones
M. Terrones
Ajayan Pulickel
Luis Balicas
Keywords:
Optoelectronics
Ambipolar diffusion
Field-effect transistor
Materials science
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