Old Web
English
Sign In
Acemap
>
Paper
>
(Invited) Microstrucutural Characterizaton of Stressed AlGaN/GaN HEMT Devices
(Invited) Microstrucutural Characterizaton of Stressed AlGaN/GaN HEMT Devices
2014
Monta Ray Holzworth
P. G. Whiting
S. J. Pearton
Liu Lu
Tsung-Sheng Kang
F. Ren
Erin Patrick
Mark E. Law
K. S. Jones
Keywords:
Philosophy
Electrical engineering
Telecommunications
High-electron-mobility transistor
algan gan
Engineering physics
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
2
Citations
NaN
KQI
[]