High-performance transistors based on monolayer CVD MoS2 grown on molten glass

Transition metal dichalcogenides (TMDCs) are emerging two-dimensional materials for their potential in next-generation electronics. One of the big challenges is to realize a large single-crystal TMDCs film with high mobility, which is critical for channel materials. Herein, we report an optimized atmospheric pressure chemical vapor deposition method for growing large single-crystal monolayer MoS2 on molten glass substrate with domain size up to 563 μm. Better interface quality can be achieved using high-κ dielectrics with respect to the conventional thermal SiO2. Mobility up to 24 cm2 V−1 s−1 at room temperature and 84 cm2 V−1 s−1 at 20 K can be obtained. This low-cost growth of high-quality, large single-crystal size of two dimensional materials provides a pathway for high-performance two dimensional electronic devices.