Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs

We report the demonstration of a new contact resistance reduction technology for n + Si S/D using Tellurium (Te) implant and segregation, achieving a low electron SBH of 0.11 eV. The Te implant reduced contact resistance in n-FinFETs by 40 %. When integrated in a process flow where Te is also introduced into the gate, improvement in gate electrostatic control is observed, leading to an improvement in ballistic efficiency. At I Off of 100 nA/μm, Te implant increases I On by 22 % as compared with control FinFETs without Te implant.