Voltage tunable acoustoelectric interaction in GaAs/AlGaAs heterojunctions

The interaction between surface acoustic waves and high mobility quasi‐two‐dimensional electron systems (2DES) in GaAs/AlGaAs heterojunctions with variable carrier density is investigated experimentally. In specially designed samples the strength of this acoustoelectric interaction can be controlled via the field‐effect induced variation of the carrier density of the 2DES. Since the sensitivity of surface acoustic wave experiments is particularly high at very low conductivities, the proposed technique will be an especially valuable tool for the investigation of 2DES with extremely low sheet carrier densities. We demonstrate that the proper use of a metallic gate electrode does not conflict with the piezoelectric interaction between the mobile carriers confined in the heterostructure and the surface acoustic wave propagating on the piezoelectric substrate.