SnO2 thin films for gas sensors modified by hexamethyldisilazane after rapid thermal annealing

Abstract Simple method of SnO 2 layer modification, using very small quantity of hexamethyldisilazane and rapid thermal annealing in the range 800–1200 °C is proposed. The distribution profile of the dopant elements of C, N, Si in the SnO 2 /SiO 2 /Si structure is investigated. Penetration of Si in the whole depth of SnO 2 is revealed and formation of SiO 2 regions in the SnO 2 bulk is assumed. Simultaneously, Sn diffusion in the SiO 2 layer is observed. The combination of standard AES and XPS techniques with a hollow cathode discharge method appears to be very useful for detection of traces of dopants in the layers.