GaAsNSb-base GaAs heterojunction bipolar transistor with a low turn-on voltage

A GaAsNSb heterojunction bipolar transistor (HBT) structure was grown by solid source molecular beam epitaxy. The fabricated HBT showed a reduction in the turn-on voltage of ∼195mV when GaAs0.915N0.005Sb0.08 was used as the base material. The small knee voltage (<1V) of the GaAsNSb HBT indicates that the current blocking effect is small. Significant gain degradation in the GaAsNSb HBT was observed when the nitrogen (N) composition was increased to 2%. The results show that the dilute nitride GaAsNSb materials have potential for reducing the turn-on voltage in GaAs HBTs.