Pressure‐induced transformations of nitrogen implanted into silicon

Czochralski (CZ) Si samples implanted with nitrogen, with doses 10 17 ion/cm 2 and 10 18 ion/cm 2 , at 140 keV, were studied by means of Fourier transform infrared spectroscopy after annealing at 1130 °C/5 h under different hydrostatic pressures, from 1 bar to 10.7 kbar. It has been found for each pressure applied, that the increased nitrogen dose leads to transformation of the broadband spectra to the fine structure ones, corresponding to crystalline silicon nitride. The spectral position of observed sharp peaks in the investigated pressure region is red shifted in comparison to that for the peaks of crystalline silicon oxynitride found recently by other investigators in nitrogen-containing poly-Si as well as in a residual melt of nitrogen-doped CZ-Si. The application of the pressure during annealing results in further red shift of the nitrogen-related bands. The observed decrease of frequency of vibrational bands is explained in terms of the pressure induced lowered incorporation of oxygen into growing oxynitride phase. Secondary ion mass spectrometry data reveal the decrease of oxygen content in implanted layer with increasing pressure during annealing.