Progress of blue and green InGaN laser diodes
2010
Mobile laser projection is of great commercial interest. Today, a key parameter in embedded mobile applications is the
optical output power and wall plug efficiency. We report improvements of the performance of true blue single mode
InGaN laser at 450nm with output power of more than 200mW in cw operation for temperatures between 20°C and
60°C. We succeeded in temperature independent high wall plug efficiency of 15-18% for stable output power levels
from 100 to 200mW with estimated life times >4000h in cw operation. Furthermore, we present pioneering studies on
long green InGaN laser diodes. The technological challenge is to achieve InGaN-quantum wells with sufficiently high
material quality for lasing. We investigate the density of non radiative defects by electro-optical measurements confirming
that low defect densities are essential for stimulated emission. Laser operation at 516nm with more than 50mW output
power in cw operation is demonstrated in combination with a high wall plug efficiency of 2.7%.
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