Photoconductivity in thin films of a-In40Se30Te30

Photoconductivity in thin film of a-In40Se30Te30, obtained by vacuum evaporation, was studied at different temperatures and illumination intensities. Photoconductivity increases exponentially with T in the range 310–370 K. Intensity dependence of photocurrent at various temperatures reveals power dependence of incident radiation. Transient photoconductivity observations made at different temperatures and intensities show that rise and decay of photocurrent are quite slow in the present sample. The rise and decay were found to be exponential with the same value of recombination time.