A 0.13pmthin SOICMOS technology withlow-cost SiGe:C HBTsandcomplementary high-voltage LDMOS

We demonstrate theintegration, in 0.13jm thinSOICMOS technology, oflow-cost high- performance high-voltage LDMOS andHBT transistors. Thesespecific devices areobtained, without affecting CMOS coreprocessdevices. Static and dynamic characteristics forbothtypeoftransistors arepresented, showingstateof the art devicessuitable for RF/analog/digital System OnChipintegration. IndexTerms High-voltage MOS, bipolar transistors, heterojunction, SOI,analog/RF, process integration, 130nm