Role of band filling in tuning the high-field phases of URu2Si2

We present a detailed study of the low temperature and high magnetic eld phases in the chemical substitution series URu 2Si 2-xPx using electrical transport and magnetization in pulsed magnetic elds up to 65T. Within the hidden order x-regime (0 < x ≲ 0.035) the eld induced ordering that was earlier seen for x = 0 is robust, even as the hidden order temperature is suppressed. Earlier work shows that for 0.035 ≲ x ≲ 0.26 there is a Kondo lattice with a no-ordered state that is replaced by antiferromagnetism for 0.26 ≲ x ≲ 0.5. We observe a simpli ed continuation of the eld induced order in the no-order x-regime and an enhancement of the field induced order upon the destruction of the antiferromagnetism with magnetic field. These results closely resemble what is seen for URu 2-xRhxSi 2 a, from which we infer that charge tuning dominantly controls the ground state of URu 2Si 2, regardless of whether s/p or d-electrons are replaced. Contraction of the unit cell volume may also play a role at large x. This provides guidance for determining the specific factors that lead to hidden order versus magnetism in this family of materials and constrainsmore » possible models for hidden order.« less