Low-Voltage Gate-Leakage-Based Timer Using an Amplifier-Less Replica-Bias Switching Technique in 55-nm DDC CMOS

Energy-efficient timer circuits are required in numerous applications for periodic operations, such as performing measurements and communicating data. In this paper, we present a gate-leakage-based timer that utilizes an amplifier-less replica-bias switching technique to generate a stable frequency, which can operate at a low supply voltage. To guarantee a stable oscillation frequency in a small circuit area, the proposed design adopts an architecture that discharges a pre-charged capacitor through a resistive element (gate-leaking MOS capacitor) with a low-leakage switch. In the proposed switching technique, the low-voltage timer operates by tracking the discharging terminal of the capacitor and biasing the reference voltage of the switch unit, thereby enabling the minimization of the leakage current without the need for analog amplifier circuits. The high supply sensitivity of the timer is addressed by regulating the supply voltage using a native NMOS header (NNH). The proposed design is fabricated using the 55-nm deeply depleted channel (DDC) CMOS technology, which has a strong body coefficient and occupies an active circuit area of 0.0022 mm2. The measurements show that the proposed design can achieve an energy-per-cycle value of 25 pJ/cycle at a supply voltage of 350 mV when body biasing is applied. The measured Allan deviation floor is 200 ppm at room temperature. The timer exhibits an average temperature sensitivity of 810 ppm/°C for four samples. Moreover, a reduction in the supply sensitivity by a factor of 26 using the NNH is demonstrated in an active circuit area of 0.0034 mm2.