Characterization of CdTe passivation layers grown by evaporation with thermal treatments
2011
CdTe surface passivation layers were deposited by thermal evaporation or electron beam evaporation on (111) HgCdTe
epilayers. The processes of CdTe layer deposition were carried out at different temperatures from 100°C to 250°C.
Furthermore, prepared samples were annealed at a temperature range between 150°C and 300°C. Directly, scanning
electron microscope (SEM) was used to evaluate the CdTe passivation layers. The structures of CdTe layers and the
interface of CdTe/HgCdTe were studied by scanning the cross section of the samples. The results showed that the
thermal treatments could merge grain boundaries. Otherwise, the compositional properties of samples were surveyed by
secondary ion mass spectroscopy (SIMS). A compact CdTe structure near the HgCdTe surface caused by heating
deposition and compositional interdiffusion at CdTe/HgCdTe interface were observed. Moreover, the X-ray diffraction
(XRD) curves of the layers showed that the CdTe crystal quality was improved by thermal diffusion. The experimental
results showed that both heating during the deposition process and annealing after growth can effectively improve the
quality of CdTe passivation layers.
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