Substrate effect on the transport properties of semiconducting films

In this study, transport properties of InP/Si heteroepitaxial layers were investigated. Current‐voltage characteristics, measured across the heterointerface, revealed diode behavior at 300 K only with Si of p‐type conductivity. With n‐type Si, a transition from Ohmic behavior at 300 K to a diode characteristic at low temperatures was observed at 250 K. Due to the efficient electrical isolation of layer and p‐type substrate van der Pauw measurements with InP/p‐Si could be analyzed in the conventional manner. For InP/n‐type Si the applicability of the two‐layer conduction model suggested by Petritz could be demonstrated for 300 K measurements. With decreasing temperature a pronounced deviation from the model occurred due to the increased effect of the heterointerface.