Mueller matrix polarimetry for immersion lithography tools with a polarization monitoring system at the wafer plane
2009
It will be required for more accurate lithography simulation of complicated mask patterns then ever, under hyper-NA
(numerical aperture) projection lens and aggressive small-aperture polarized-light illumination, to construct two systems
of polarimetry; one is polarimetry for illumination, and the other is Mueller matrix polarimetry for projection lenses. The
former polarimetry already reported by the authors is necessary for us to appreciate how the true polarization state of
illumination is. The polarimeter mask described in the paper determines illumination polarization states by Stokes
parameters. The latter polarimetry is the main subject of this paper. A Mueller matrix is a translation matrix of the input
Stokes parameters to the output Stokes parameters. With the full elements of the Mueller matrix of a projection lens, the
Stokes parameters of a light at the wafer plane can be easily predicted from the Stokes parameters of any illumination
conditions. This paper proposed a new method of Mueller matrix polarimetry and a monitor mask used for 193-nm
immersion lithography tools with a polarization monitor at the wafer plane.
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