PID- and UVID-free n-type Solar Cells and Modules

Abstract In this paper we report on the high stability of our n-type front junction solar cells (n-PERT) exposed to potential-induced degradation (PID) and UV-induced degradation (UVID) conditions. These intrinsically stable n-Pasha cells enable PID- and UVID-resistant modules even with industrially low-cost standard EVA encapsulant, independent of system grounding and system voltage. Based on intentional modifications of the Boron emitter and/or the dielectric layer in the PID-free and UVID-free n-Pasha solar cells, we are able to replicate reported degradation effects and study the mechanisms behind it. A combination of altering the boron profile and the dielectric properties together with increasing the interface defect density D it is detrimental for the stability. Applying our standard optimal B-diffusion and passivation scheme assure that the UV radiation and system voltage have virtually no effect on our n-Pasha cell and module performance.