Highly flexible and stable memristive devices based on hexagonal boron-nitride nanosheets: Polymethyl methacrylate nanocomposites

Abstract The current-voltage results for nonvolatile memristive devices based on hexagonal boron-nitride nanosheets:polymethyl methacrylate nanocomposites exhibit the characteristics of write-once-read-many-times in the voltage range from −3 to 3 V. The electrical characteristics remain unchanged even the devices are under highly bended states. After the devices had finished the “writing” process, they could be read more than 500 times under both flat and bending conditions. Both the high and the low resistance states could be maintained at almost constant levels for more than 1.5 × 104 s, and the ON/OFF ratio of the devices remained about 103. After more than 2 × 103 bendings, the electrical properties of the devices remained almost the same.