A Self-Bias Rectifier With 27.6% PCE at −30dBm for RF Energy Harvesting

This paper presents a novel self-bias CMOS rectifier for ultra-high frequency (UHF) RF energy harvester, which achieves a high power conversion efficiency (PCE) at an ultra-low input power. Compared to other state-of-the-art topologies, the proposed architecture combines static and dynamic compensated techniques to enhance the conduction capacity when the input power is lower than −27dBm. A six-stage rectifier is designed using this proposed topology in a 130nm CMOS process technology. Operating at 915MHz and driving a 1MΩ load resistor, the post-layout simulation PCE of this work is 27.6% at −30dBm input power. A sensitivity of −30dBm is stimulated with 0.8V output voltage across a capacitive load.