Performance of a 1.35NA ArF immersion lithography system for 40-nm applications
2007
Water based immersion lithography is now widely recognized a key enabler for continued device shrinks beyond the
limits of classical dry lithography. Since 2004, ASML has shipped multiple TWINSCAN immersion systems to IC
manufacturers, which have facilitated immersion process integration and optimization. In early 2006, ASML
commenced shipment of the first immersion systems for 45nm volume production, featuring an innovative in-line
catadioptric lens with a numerical aperture (NA) of 1.2 and a high transmission polarized illumination system. A
natural extension of this technology, the XT:1900Gi supports the continued drive for device shrinks that the
semiconductor industry demands by offering 40nm half-pitch resolution. This tool features a projection lens based on
the already proven in-line catadioptric lens concept but with an enhanced, industry leading NA of 1.35. In this paper, we
will discuss the immersion technology challenges and solutions, and present performance data for this latest dual wafer
stage TWINSCAN immersion system.
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