Magneto-transport property of an AlInN/AlN/GaN heterostructure

Abstract This paper reports a research of the magneto-transport property of an AlInN/AlN/GaN heterostructure. A large positive magnetoresistance (MR) up to 79% under 9 T is observed, which is indicative of potential sensor application. The observed positive MR is attributed to the presence of the parallel conduction. Meanwhile, the Shubnikov-de Hass (SdH) oscillations of the longitudinal MR appear up at high magnetic field. From the SdH oscillations, beating patterns are observed in the AlInN/AlN/GaN heterostructure. Neither the magneto-intersubband oscillation nor the zero-field spin splitting can explain the observed beating patterns, which can be attributed to the sample inhomogeneity.