Stability of a-Si:H solar cells deposited by Ar-treatment or by ECR techniques

Abstract Stability against light soaking was studied for amorphous silicon (a-Si:H) solar cells using three different i-layers; (a) device-quality a-Si:H (standard a-Si:H) with bandgap of 1.75 eV, (b) narrow bandgap (1.55 eV) a-Si:H fabricated by Ar* chemical annealing and (c) a-Si:H(Cl) fabricated from SiH 2 Cl 2 . Both the narrow bandgap a-Si:H and the a-Si:H(Cl) solar cells showed much improved stability than that of the standard a-Si:H solar cells: e.g., fill factor of the narrow bandgap a-Si:H cell only slightly decreased from 56% to 53%, while that of the standard a-Si:H cell degraded from 62% to 51%. In addition, mobility–lifetime products of the a-Si:H(Cl) cell also exhibited improved stability than that of the standard a-Si:H solar cell.