Ultrafast electron energy-dependent delocalization dynamics in germanium selenide

Ultrafast scattering process of high-energy carriers plays a key role in the performance of electronics and optoelectronics, and have been studied in several semiconductors. Core-hole clock spectroscopy is a unique technique for providing ultrafast charge transfer information with sub-femtosecond timescale. Here we demonstrate that germanium selenide (GeSe) semiconductor exhibits electronic states-dependent charge delocalization time by resonant photo exciting the core electrons to different final states using hard-x-ray photoemission spectroscopy. Thanks to the experiment geometry and the different orbital polarizations in the conduction band, the delocalization time of electron in high energy electronic state probed from Se 1s is ~470 as, which is three times longer than the delocalization time of electrons located in lower energy electronic state probed from Ge 1s. Our demonstration in GeSe offers an opportunity to precisely distinguish the energy-dependent dynamics in layered semiconductor, and will pave the way to design the ultrafast devices in the future. The ability to gather experimental access to the kinetics of charge carriers is central in semiconductor physics. The authors utilize hard x-ray radiation from a synchrotron source to probe the charge transfer dynamics in the attosecond regime in layered GeSe, thus providing crucial information for future photonic and optoelectronic devices.