A 220 GHz finline mixer with ultra-wide instantaneous bandwidth
2015
We describe the design and fabrication of a 220 GHz
superconductor-insulator-superconductor (SIS) mixer with ultrawide
IF bandwidth. The mixer is fabricated on a 100 µm thick
quartz substrate, with planar circuit on-chip integration. The
RF power is coupled to the tunnel junction via a unilateral
finline taper and a slotline-to-microstrip transition. We used a
double-stub tuning network to tune out the junction’s parasitic
capacitance at a broad RF bandwidth, and matched the output
impedance of the mixer to the input impedance of the IF amplifier
(50 Ω) from 4–18 GHz using a 6-stage IF impedance-transformer.
We have fabricated these devices and have measured good DC
current-voltage (IV) characteristic curves. The heterodyne mixing
performance of these devices is currently being measured, and we
expect to present the results in the forthcoming ISSTT conference
in March.
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