Electrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiC

Abstract We have studied the defects introduced in n -type 4 H -SiC during sputter deposition of tungsten using deep-level transient spectroscopy (DLTS). Current-voltage and capacitance-voltage measurements showed a deterioration of diode thermionic emission characteristics due to the sputter deposition. Two electrically active defects E 0.29 and E 0.69 were introduced. Depth profiling revealed that sputter deposition increases the concentration of the native Z 1 defect. A comparison with prominent irradiation and process induced defects showed that the E 0.29 was unique and introduced during sputter deposition only. The E 0.69 may be silicon vacancy related defect.