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Effects of Source and Drain Impurity Profile on Breakdown Voltage of High-Performance Si TFTs
Effects of Source and Drain Impurity Profile on Breakdown Voltage of High-Performance Si TFTs
2008
Shinzo Tsuboi
Genshiro Kawachi
Masahiro Mitani
Takashi Okada
Keywords:
Impact ionization
Theoretical computer science
Impurity
Breakdown voltage
Electronic engineering
Computer science
Engineering physics
shallow junction
Distributed computing
Correction
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