Chemical changes of ITO/p and ZnO/p interfaces as a function of deposition parameters

Abstract The influence of deposition parameters of p-type amorphous silicon on the chemical properties of different transparent conductive oxides (TCO)/p a-Si:H interfaces (ITO/p and ZnO/p) has been investigated by X-ray photoelectron spectroscopy (XPS). p samples were prepared by plasma-enhanced chemical vapour deposition (PECVD) from a SiH 4 , B 2 H 6 and He mixture, whereas TCO were made by r.f.-magnetron sputtering. In 0 has been detected on all ITO/p surfaces as a consequence of the reduction of this TCO by hydrogen resulting from silane decomposition during p-layer formation. Oxygen is released from the indium oxide crystalline lattice, which can react with the silicon to form silicon oxide, SiO x , 1≤ x ≤2. No presence of Zn 0 has been observed on any ZnO/p bilayer. Owing to this fact, ZnO/p interfaces are more abrupt than the ITO/p interfaces and, therefore, they are good to be applied in amorphous silicon-based solar cells.