Ion-beam etching, and chemically assisted ion-beam etching to produce X-ray masks for synchrotron-radiation-lithography

Abstract Gold patterns for x-ray masks can by obtain through pattern transfer in gold-absorbers by method of Ion-Beam Etching and Chemical Assisted Ion-Beam Etching. This work presents results of pattern transfer by soft mask (resist) and hard mask (metal layer) through a three-stage etching process in Au-absorber and a resulting wall inclination of approx 86 0 (quasiperpendicular).