Temporal spin splitter based on an antiparallel double δ-magnetic-barrier nanostructure

We theoretically investigate the dwell time for electrons in an antiparallel double $\delta $ -magnetic-barrier nanostructure, which is constructed on the surface of the InAs/Al x In1- x As heterostructure by patterning two ferromagnetic (FM) stripes. It is shown that the dwell time is dependent on electron spins due to the spin–field interaction between spins and magnetic fields. It is also shown that both magnitude and sign of the spin polarization in the dwell time can be modulated by the structural width or magnetic-strength difference between two magnetic barriers, which may give rise to a controllable temporal spin splitter for spintronics device applications.