GROWTH MODES OF ZNSE ON GAAS

Growth modes of coherently strained ZnSe on GaAs are investigated as a function of the surface preparation and temperature. We find that the flattest and most uniform layers are grown at low temperatures, ∼300 °C, on surfaces exposed to high‐temperature Se treatment. Nucleation rate depends on the surface coverage of Ga2Se3. High‐temperature exposure of Ga‐rich, (001)‐oriented, GaAs to Se reduces the thickness required for the transition to a two‐dimensional growth mode. The surface roughness increases with temperature as a result of three‐dimensional island growth.