Simulation Study of Dielectric Modulated Dual Channel Trench Gate TFET Based Biosensor

A dielectric modulated dual channel trench gate tunnel FET (DM-DCTGTFET) based biosensor is proposed for label-free detection of biomolecules. The gate of DM-DCTGTFET is placed vertically in a trench for creating two channels on both sides of the gate. The parallel conduction of two channels enhances the current of the DM-DCTGTFET. Further, in the proposed structure, two cavities are carved in the gate-oxide on either side of gate for biomolecules immobilization. The sensitivity performance of DM-DCTGTFET is analyzed using 2D simulations in the TCAD tool (ATLAS). The proposed structure exhibits high current sensitivity (~1012) as well as exorbitant voltage sensitivity ( $5.2 {V}$ ) which are significantly higher than the recently reported TFET based biosensors. Therefore, the DM-DCTGTFET biosensor is a highly promising structure due to dual sensing capabilities for biomolecules.