Old Web
English
Sign In
Acemap
>
Paper
>
Native and process induced defects in GaN films grown on Si substrates probed using a monoenergetic positron beam
Native and process induced defects in GaN films grown on Si substrates probed using a monoenergetic positron beam
2014
A Uedono
Tatsuya Fujishima
Yu Cao
Sameer Joglekar
Daniel Piedra
Hyung-Seok Lee
Yuhao Zhang
Yang Zhang
Nakaaki Yoshihara
Shoji Ishibashi
Masatomo Sumiya
Oleg Laboutin
Wayne Johnson
Tomas Palacios
Keywords:
Analytical chemistry
Materials science
Beam (structure)
Positron
positron beam
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
12
References
0
Citations
NaN
KQI
[]