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Low-Frequency Noise in SiGe P-Channel MOSFETs designed for 0.13 um Technology
Low-Frequency Noise in SiGe P-Channel MOSFETs designed for 0.13 um Technology
1998
Okhonin
Georgescu
Fischer
Risch
Keywords:
Voltage
Infrasound
Optoelectronics
p channel
Silicon-germanium
Transconductance
particle scattering
Materials science
CMOS
Correction
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