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InGaP/GaAs Carbon-Doped Heterostructures for Heterojunction Bipolar Transistors
InGaP/GaAs Carbon-Doped Heterostructures for Heterojunction Bipolar Transistors
1998
Q. J. Hartmann
D. A. Ahmari
Q. Yang
A. P. Curtis
G. E. Stillman
Keywords:
Heterojunction
Doping
Bipolar junction transistor
Carbon
Electronic engineering
Materials science
Optoelectronics
carbon doped
ingap gaas
Correction
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