Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor

Solution- p-type thin-film transistors, consisting of sol-gel-processed CuO films, were fabricated. The optoelectric properties of sol-gel-processed, CuO-based back gate thin-film transistors were investigated, and a detectivity of $1.38\times 10^{ {11}}$ (cm Hz $^{ {1/2}}~\text{W}^{-1})$ was achieved. This detectivity for sol-gel-processed CuO thin-film transistors is higher than that of the previously reported layered two-dimensional material systems and comparable to that of devices based on a one-dimensional nanowire system. Our results indicate that the sol-gel–processed, CuO-based photodetector system is a promising candidate for applications, such as near-infrared imaging devices, sensors, solar cells, and p-type inks for future printed electronics.