Plasmonic Enhanced InP Nanowire Array Solar Cell through Optoelectronic Modeling

Vertical nanowire (NW) arrays are a promising candidate for the next generation of the optoelectronics industry because of their significant features. Here, we investigated the InP NW array solar cells and obtained the optoelectronic properties of the structure. To improve the performance of the NW array solar cells, we placed a metal layer of Au at the bottom of the NWs and considered their top part to be a conical-shaped parabola. Using optical and electrical simulations, it has been shown that the proposed structure improves the absorption of light in normal incidence, especially at wavelengths near the bandgap of InP, where photons are usually not absorbed. Under inclined radiation, light absorption is also improved in the middle part of the solar spectrum. Increased light absorption in the cell led to the generation of more electron–hole pairs, resulting in an increase in short circuit current density from 24.1 mA/cm2 to 27.64 mA/cm2, which is equivalent to 14.69% improvement.