12 nm-gate-length ultrathin-body InGaAs/InAs MOSFETs with 8.3•10 5 I ON /I OFF

Fig. 3 shows transfer characteristics of a 12 nm-L g FET, achieving 1.8 mS/µm peak g m at V DS =0.5 V. The subthreshold swing, Fig. 4, is 98.6 mV/dec. at V DS =0.1 V and 107.5 mV/dec. at V DS =0.5 V. The minimum leakage current is as low as 1.3 nA/µm at V DS =0.5 V, where I off is limited by BTBT. This leakage current is sufficiently low to meet the requirement of high performance (HP, 100 nA/µm) logic applications, and close to the specification of standard performance (SP, 1 nA/µm) applications. Fig. 5 shows the output characteristics of a 12 nm-L g FET. The maximum I D exceeds 1.25 mA/µm at V GS =1.2 V and V DS =0.7 V, and the on-resistance (R on ) at V GS =1 V is 302 Ω·µm. The I D at V GS =1.2 V and V DS =0.5 V is 1.1 mA/µm, showing maximum I on /I off ∼8.3×10 5 . Examining (Fig. 6) g m as a function of L g , the present InGaAs/InAs channel devices show g m slightly superior to our previously-reported devices using InP spacers and InGaAs channels [10] but lower g m than devices using InGaAs spacers and InAs channels [9]. On-resistance, Fig. 7, ∼262 Ω·µm when extrapolated to zero L g , is also consistent with earlier results using similar InP spacers [10].