Study on High Performance (110) PFETs with Embedded SiGe

The effects of inversion-layer capacitance and stress-induced mobility at short channel region (L g =35 nm) on (100) and (110) pFETs are investigated. 64 % mobility enhancement at E eff = 1.1 MV/cm and 0.15 nm thinner inversion-layer capacitance at E ox = 4.5 MV/cm are obtained for (110) embedded SiGe (eSiGe) pFETs, compared to (100) eSiGe pFETs. Calculated results suggest that (110) eSiGe pFETs will gain additional 63% higher mobility with 1 GPa uniaxial stress by controlling surface roughness scattering at SiO 2 /Si(110) interface.