Properties of $SiO_2$Deposited by Remote Plasma Chemical Vapor Deposition(RPCVD)

Silicon oxide thin films were deposited by remote plasma chemical vapor deposition (RPCYD). The effect of the operating variables, such as plasma power, deposition temperature and partial pressure of reactant on the material Properties of the silicon oxide film was investigated. By XPS, it was found out that the film was suboxide (O/Siinterface. The amount of dangling bonds at the Si/SiOinterfaces were measured by ESR and the concentration of hydrogen bond was obtained by SIMS and FT-IR. The bond angle distribution(d/) was shown to be similiar to thermal oxide above 20 but the etch rate was higher than that of the thermal oxides due to the structural difference and the stress between silicon substrate and silicon oxide film.