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Sub-0.5mm Polysilicon Gate Etching with Cl2/O2 Plasma in An Inductively Coupled Plasma Etcher
Sub-0.5mm Polysilicon Gate Etching with Cl2/O2 Plasma in An Inductively Coupled Plasma Etcher
1997
Songlin Xu
Xueyu Qian
Jerry C. P. Yin
Keywords:
Reactive-ion etching
Capacitively coupled plasma
Plasma etcher
Inductively coupled plasma
Analytical chemistry
Plasma
Materials science
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