Polarization photosensitivity of silicon solar cells with an antireflection coating consisting of a mixture of indium and tin oxides

The photoelectric properties of ITO/n-Si solar cells with ITO-side oblique incidence of linearly polarized light on the solar cells have been studied. Polarization photosensitivity and an increase in the relative quantum efficiency of photoconversion as a result of a decrease in reflection losses were found. The induced photopleochroism coefficient P I increases with the angle of incidence θ as P I ∼θ2. The polarization photosensitivity of solar cells was studied as a function of the photon energy between the band gaps of the two contiguous materials. The results show that the solar cells studied can be used as selective polarimetric photosensors.