Surface Morphological and Electrical Properties of Sputtered Tio 2 Thin Films

Titanium dioxide films were formed on quartz and crystalline p-Si (100) substrates by DC reactive magnetron sputtering method. Pure titanium target was sputtered at a constant oxygen partial pressure of 5x10 - 2 Pa, and at different sputtering powers in the range 80 - 200 W. The as-deposited films were annealed in air for 1 hour at 1023 K. The deposited films were characterized by studying the surface morphology by atomic force microscopy (AFM), electrical and dielectric properties from current-voltage and capacitance-voltage measurements. Atomic force micrographs of the films showed that the Rrms and Ra increased with the increase of sputter power from 80 to 200 W. The leakage current density was increased by increasing the sputtering power. Keyword: - AFM, DC sputtering technique, Titanium dioxide thin film.