High-Frequency Single-Switch ZVS Gate Driver Based on a Class $\Phi_1$ Resonant Inverter

This paper introduces a new type of switched-mode gate driver, which is capable of operating at high frequencies. This topology satisfies requirements of small passive storage components, low-voltage stress, and high design flexibility. Most popular gate-drive circuits require at least two transistors. The proposed circuit has only a single transistor and is suitable for operation at switching frequencies on the order of several megahertz. The output voltage of the gate driver is a quasi-rectangular waveform shaped by a resonant network to produce the desired gate–source voltage waveform. A detailed steady-state operation of the proposed gate driver is discussed. The power-loss analysis and design procedure are presented. Experimental results are given to verify the presented analytical approach. A laboratory prototype of the gate driver is designed, built, and tested at a switching frequency of 20 MHz.